High-resolution power electronics measurements

ABSTRACT

Disclosed examples include systems to determine an on-state impedance of a high voltage transistor, and measurement circuits to measure the drain voltage of a drain terminal of the high voltage transistor during switching, including an attenuator circuit to generate an attenuator output signal representing a voltage across the high voltage transistor when the high voltage transistor is turned on, and a differential amplifier to provide an amplified sense voltage signal according to the attenuator output signal. The attenuator circuit includes a clamp transistor coupled with the drain terminal of the high voltage transistor to provide a sense signal to a first internal node, a resistive voltage divider circuit to provide the attenuator output signal based on the sense signal, and a first clamp circuit to limit the sense signal voltage when the high voltage transistor is turned off.

TECHNICAL FIELD

The present disclosure relates generally to measuring transistoroperating characteristics and more particularly to systems and circuitsto measure voltages across high-voltage transistors during switching todetermine on-state impedances during switching.

BACKGROUND

Gallium nitride (GaN) and aluminum gallium nitride (AlGaN) high electronmobility transistors (HEMTs), silicon carbide (SiC) and other highvoltage transistors are becoming popular for high voltage powerconversion applications, due to high breakdown voltages as well as lowon state resistance and reduced conduction losses. Electron trapping inAlGaN/GaN HEMTs causes current collapse and increased drain-sourceon-state resistance (RDSON) in certain dynamic conditions. However,measuring the dynamic RDSON performance of HEMTs is difficult.Measurements by semiconductor testers do not simulate the true deviceconditions in actual power electronics circuits. For example, switchingtransistors in typical power converters undergo a hard-switchingtransition before turning on. The transistors also switch at highfrequencies, typically hundreds of KHz, and thereby the measurementneeds to reflect the RDSON value within a very short time after turn on,such as a microsecond in some instances. These conditions are verydifficult to replicate in semiconductor testers, particularly fortesting multiple devices. Improved circuits and techniques formeasurement of the dynamic RDSON under the operating conditions of realpower electronics circuits are therefore desired, particularly for HEMTssuch as high-voltage AlGaN/GaN and SiC transistors. One approach is tomeasure the on-state drain-source voltage and the correspondingtransistor current during dynamic operation. However, the drain voltagein high voltage applications varies between hundreds of volts in the offstate and millivolts in the on state. As a result, direct measurementusing ordinary oscilloscope voltage probes can saturate the oscilloscopechannel when the high-voltage transistor is off. Moreover, the measureddrain-source transistor voltage cannot be accurately measured byconventional high voltage oscilloscope probes due to their high divideratios, typically 100×, resulting in signals too small for theoscilloscope to resolve when the transistor is on. Conventional voltageclamping circuitry can be used to limit the maximum voltage seen by theoscilloscope, but these circuits introduce large RC time constants andthus do not provide sufficiently short settling times to accuratelyassess dynamic drain-source voltage characteristics and hence dynamicRDSON for high-voltage AlGaN/GaN and SiC transistors in real-worldconditions.

SUMMARY

Disclosed examples include systems to determine high-voltage transistorRDSON, and measurement circuits to measure the transistor drain voltageduring switching. The circuitry facilitates high-resolution measurementof dynamic characteristics of drain-source voltages of AlGaN/GaN and SiCdevices or other high voltage transistors, and the apparatus andtechniques can be used in hard-switching and other high-voltage circuitsincluding a high voltage transistor device under test (DUT) undergoingswitching. Systems are disclosed for determining the RDSON of a highvoltage transistor, including a drive circuit to turn the high-voltagetransistor on and off in a high voltage circuit, a subjecting circuit tosubject the high-voltage transistor to a hard-switching transition, anda current sense circuit to provide a signal representing a currentflowing through the high-voltage transistor during switching. The systemincludes a measurement circuit with attenuator and differentialamplifier circuitry to provide an amplified sense voltage signalrepresenting the voltage of the high-voltage transistor duringswitching, and a high-speed analog signal digitizer, such as anoscilloscope, to provide an on-state impedance value based on the slopeof the current sense signal and the slope of the amplified sense voltagesignal.

The measurement circuit includes an attenuator circuit to generate anattenuator output signal representing a voltage across the high voltagetransistor when the high voltage transistor is turned on, and adifferential amplifier to provide an amplified sense voltage signalaccording to the attenuator output signal. The attenuator circuitincludes a clamp transistor coupled with the high voltage transistor toprovide a sense signal to a resistive voltage divider circuit to providethe attenuator output signal, and a first clamp circuit to limit thesense signal voltage when the high voltage transistor is turned off. Asecond clamp circuit in certain embodiments conditions the attenuatoroutput signal, including a low capacitance diode to limit the voltage ofthe attenuator output node, and a compensation capacitor can be includedto compensate a capacitance of the differential amplifier input for fastsignal settling time. The resistive voltage divider circuit isadjustable in certain examples to facilitate measurement of a widedynamic range of drain-source voltage and other parameters associatedwith the DUT RDSON.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram illustrating a high voltage transistordevice under test and a test pod including an attenuator circuit and adifferential amplifier circuit.

FIG. 2 is a schematic diagram of a second test by example.

FIG. 3 is a schematic diagram of a motherboard including a plurality oftest pods and multiplexer circuits.

FIG. 4 is a system diagram showing a plurality of motherboards providingsignals to first and second levels of multiplexers to provide inputsignals to an oscilloscope to analyze devices under test.

FIG. 5 is a simplified system diagram showing a high voltage transistordevice under test (DUT) undergoing measurement of drain voltage andsource current during switching in a high voltage subjecting circuit inthe system of FIG. 4.

FIG. 6 is a graph showing gate voltage, drain voltage and source currentwaveforms for analyzing drain-source on resistance using voltage andcurrent slope analysis for a high voltage transistor device under testin the system of FIG. 4.

FIG. 7 is a graph showing oversampling and linear curve fitting fordrain voltage and source current data in the system of FIG. 4.

FIG. 8 is a graph showing signal waveforms in the system of FIG. 5.

DETAILED DESCRIPTION

In the drawings, like reference numerals refer to like elementsthroughout, and the various features are not necessarily drawn to scale.In the following discussion and in the claims, the terms “including”,“includes”, “having”, “has”, “with”, or variants thereof are intended tobe inclusive in a manner similar to the term “comprising”, and thusshould be interpreted to mean “including, but not limited to . . . .”Also, the term “couple” or “couples” is intended to include indirect ordirect electrical connection or combinations thereof. For example, if afirst device couples to or is coupled with a second device, thatconnection may be through a direct electrical connection, or through anindirect electrical connection via one or more intervening devices andconnections.

FIG. 1 shows a measurement circuit 100 including an attenuator circuit102 and an amplifier circuit 120 to measure a drain voltage of a highvoltage transistor M0. The attenuator circuit 102 generates anattenuator output or drain voltage clamp signal VDCLAMP at an attenuatoroutput node 121. The attenuator output signal VDCLAMP represents thevoltage across the transistor M0 when M0 is turned on, and is providedas an input to the amplifier circuit 120. The transistor M0 can be anysuitable high-voltage transistor, such as a gallium nitride, aluminumgallium nitride, silicon, or silicon carbide high voltage transistor. Asseen in FIG. 1, the transistor M0 includes a drain terminal (D)connected via line 106 to a high voltage Vd through a subjecting circuit(not shown in FIG. 1), a source terminal (S) coupled with a constantvoltage node GND through a current sense resistor R11 for measurement ofa DUT current IDUT (e.g., the source current of M0). In one example, thecurrent sense resistor R11 is a very low impedance device, such as 0.1ohms. In other examples, the current IDUT can be sensed using a currentprobe (not shown).

The DUT transistor M0 further includes a gate control terminal (G) whichreceives a switching control signal from a gate drive circuit 104. In amulti-DUT system application, a supervisory controller can operate thegate driver circuit 104 to provide switching operation of the DUT 103while on-state drain voltage measurements are obtained via themeasurement circuit 100 and conveyed through one or more multiplexers toa signal digitizing instrument such as an oscilloscope. In one example,the high-voltage transistor M0 is positioned as a device under test(DUT) 103 in a test fixture or pod to complete a switching or subjectingcircuit, such as a high-voltage hard-switching circuit illustrated anddescribed below in connection with FIG. 5. System applications asdescribed below benefit from use of the measurement circuitry 100 tofacilitate high-resolution low-voltage device drain voltage measurementsfor a number of DUTs 103 during switching. In one example, themeasurement circuit 100 also includes clamp circuitry to protect againstswitching-induced overvoltage spikes, and facilitates fast settling timefor measurements in the sub-microsecond range. The measurement circuit100 provides signal conditioning for amplification and transmission ofan amplified voltage sense signal VO through cables and multiplexers toallow a single digitizing instrument or oscilloscope to characterizeRDSON according to measured on-state drain voltages of multiple DUTs 103and according to corresponding current sense signals IS. In such asystem configuration, each DUT transistor M0 is driven by acorresponding gate drive circuit 104, and each transistor current IDUTis sensed by a corresponding current sense circuit 130 to provide acorresponding current sense signal IS.

The attenuator circuit 102 includes a clamp transistor M1 with a drainor first terminal D coupled with the drain terminal 106 of the highvoltage transistor M0 through a first resistor R1 to sense the drainvoltage of M0. In one example, the first resistor R1 is a low resistancecomponent, for example, 10 ohms. A second (e.g., source) terminal S ofM1 provides a sense signal VSENSE to a first internal node 110 of theattenuator circuit 102. M1 includes a gate control terminal G thatreceives a first bias signal at an internal node 114 from a bias circuit112 based on a first supply voltage V1. The bias circuit 112 turns theclamp transistor M1 on when the high voltage transistor M0 is turned on.The first bias circuit 112 includes a second resistor R2 coupled betweenV1 and the node 114 at the control terminal G of the clamp transistorM1, and a third resistor R3 coupled between the control terminal node114 and the constant voltage node GND. The circuit 112 further includesa bias circuit capacitor C1 coupled between the node 114 and GND toreduce voltage spikes and to stabilize the voltage on the controlterminal G of M1 during switching of the high voltage transistor M0. Inone example, the first resistor R1 is 10 ohms to provide a slight amountof impedance between the sensed drain line 106 of the DUT 103 and thedrain line 108 of the clamp transistor M1. In the illustrated example,M1 is an N-channel field effect transistor (FET) having a low gate-draincapacitance Cgd, which in combination with the bias circuit capacitor C1provides stable sensing through the drain-source channel of M1 even inthe presence of high voltage transients at the drain line as M0 isswitching. In one example, M1 is a IXTY02N120P 1200 V enhancement modeFET with a rated drain current of 200 mA, maximum rated voltage V_(DSS)of 1200 V, and an RDSON of 75 ohms, although other suitable clamptransistors can be used, preferably having low capacitance between thedrain D and both gate G and source S terminals. In this example,moreover, R2 is 1 kohm, R3 is 10 kohm and C1 is 1 μF for a first supplyvoltage V1 of 12 V, although other suitable component values can be usedin other embodiments.

The attenuator circuit 102 also includes a first voltage divider circuit116 formed by resistors R4 and R5 connected in series with one anotherbetween the first internal node 110 and GND. The voltage dividerresistors R4 and R5 are connected to one another at an attenuator outputnode 121 to provide the attenuator output signal VDCLAMP based on thesense signal VSENSE from the clamp transistor M1. In one example, R4 andR5 are preferably matched resistors having values of 10 kohms to providea low current attenuator output signal VDCLAMP, with good thermalmatching between the resistors R4, R5. In one example, R4 is adjustable.R4 in such embodiments can be implemented as a trim pot, or theresistance R4 may be implemented as a set of multiple switchableresistors configured in any suitable series, parallel and/or acombination series/parallel configurations to implement a switchselectable adjustable resistance R4. An adjustable resistance R4 incertain embodiments can be used to provide a tunable gain for theattenuation circuit 102, alone or in combination with an adjustable gainof the amplifier circuit 120 as discussed below, to support a widedynamic range of measurable parameters of the DUT 103 including withoutlimitation RDSON.

The attenuator circuit 102 also includes a first clamp circuit to limitthe voltage of the resistive voltage divider circuit R4, R5 between thefirst internal node 110 and GND when the high voltage transistor M0 isturned off. In one example, the first clamp includes a 12 V Zener diodeZ1 coupled between the first internal node 110 and GND. In operation, Z1increases the reliability of the attenuator circuit 102 by protectingthe clamp transistor M1 against spikes on the first internal node 110during switching operation of M0. In particular, when the voltage at thedrain terminal 108 of M1 goes up in response to M0 turning off, Z1passes any spike current to GND by clamping the voltage at the node 110to approximately 12 V to stabilize the attenuator output signal VDCLAMPagainst voltage spikes coupled through the drain-source capacitance Cdsof the clamp transistor M1. Z1 also improves the robustness of theattenuator circuit 102 by preventing high gate-to-source voltages fromappearing across clamp transistor M1. In this regard, the voltage at thegate node 114 of M1 is biased to a voltage less than or equal to V1(e.g., less than or equal to 12 V) by the bias circuit 112, and thenominal source voltage at the internal node 110 (VSENSE) will be thegate voltage at node 114 minus the threshold voltage (Vt) of M1 whilethe DUT transistor M0 is turned off, and Z1 prevents the sense voltageVSENSE from spiking above 12 V when M0 is turned off. In this manner,the voltage divider circuit 116 including the clamping Zener Z1 providesa stable attenuator output signal VDCLAMP from the attenuator outputnode 121 as an input signal to the amplifier circuit 120 in the presenceof high voltage switching operation of the DUT M0.

The example attenuator circuit 102 in FIG. 1 also includes a secondclamp circuit 118 to condition the attenuator output signal VDCLAMP. Thesecond clamp circuit 118 in this example includes a second voltagedivider circuit formed by resistors R6 and R7 connected in series withone another between a second supply voltage V2 (e.g., 5 V) and theconstant voltage node GND to provide a bias voltage signal at a secondinternal node 119. The second clamp circuit 118 also includes a lowcapacitance diode D1 with an anode coupled with the attenuator outputnode 121, and a cathode coupled with the second internal node 119. Inone example, D1 is a low capacitance BAT 15-03W silicon Schottky diode.In operation, the second clamp circuit 118 limits the voltage VDCLAMP ofthe attenuator output node 121. For example, when M0 is on, and currentsare less than 10 Amps, the drain voltage of M0 is typically less than afew volts, and VDCLAMP is low, so the diode D1 remains reverse biasedand will not conduct. Thus, during measurement of the DUT drain voltage,M0 is in the on state, and D1 does not affect the attenuation oramplification of the VDCLAMP signal. D1 is chosen to have a lowcapacitance value, typically less than 1 pf to improve the settling timeand accuracy of the drain voltage measurement in the first microsecondafter turn on.

The amplifier circuit 120 in one example includes a differentialamplifier 124, with a first input (+) coupled with the attenuator outputnode 121 to receive the attenuator output signal VDCLAMP, and a secondinput (−) coupled connected to GND via line 122. In other embodiments,the (−) input into the differential amplifier 124 is coupled to thesource of the DUT M0, and the shunt resistor value need not be accountedfor in the RDSON measurement. The differential amplifier 124 includes anoutput to provide an amplified sense voltage signal VO along line 126via an output resistor R10 representing the voltage across the highvoltage transistor M0 when M0 is turned on. In one example, the outputresistor R10 is a 50 ohm resistor to advantageously provide a matchedoutput impedance for use with a 50 ohm coaxial cable as discussedfurther below in connection with FIGS. 3-7. The use of a differentialamplifier 124 advantageously facilitates removal or mitigation of offseteffects and to provide common mode noise rejection of signals due toground inductance by providing a ground reference close to the DUT 103.In one example, the differential amplifier 124 is a Texas InstrumentsVCA824 ultra wideband adjustable gain fully differential amplifierhaving a low input capacitance to facilitate fast settling time andamplification of the attenuator output signal VDCLAMP to provide theamplified sense voltage signal VO for further processing to determineRDSON of the DUT M0. In one example, the gain of the amplifier 124 isset by a gain resistance R8. The gain of the amplifier 124 is adjustablein certain implementations through an adjustable resistor R8. Theamplifier circuit 120 also includes a feedback resistor R9, and isprovided with a gain adjustment bias voltage V3 in one example.

Referring also to FIG. 2, another embodiment includes a compensationcapacitor C3 to compensate a capacitance of the first input (+) of thedifferential amplifier 124. The compensation capacitor C3 includes afirst terminal connected to the first internal node 110, and a secondterminal connected to the attenuator output node 121. In one example,using a VCA824 differential amplifier 124, the input capacitance of the(+) input is on the order of 1 pF, and the compensation capacitor C3 is1 pF in order to compensate the amplifier input capacitance. Thiseffectively creates a pole to cancel the zero of the amplifier inputcapacitance, thereby shortening the input signal settling time andenhancing the bandwidth of the measurement system. As previously noted,the high switching rates of gallium nitride high-voltage transistors M0is an attractive feature for power converters or other high voltageswitching systems. The high bandwidth and low settling times achieved bythe measurement circuitry 100 facilitates measurement of the highlydynamic operating parameters of the DUT M0, while providing protectionand/or immunity against voltage spikes and noise associated with thehigh voltage switching operation of M0 in a high voltage system. Thecircuitry 100 thus presents significant advantages compared withoscilloscope probes and conventional clamping circuits to facilitateaccurate characterization of the performance of the DUT M0 forproduction testing, life testing, and other applications.

FIGS. 3-7 illustrate application of the attenuator circuit 102 and thedifferential amp circuit 120 in a multiple DUT system application fortest and/or measurement of multiple DUTs 103 during switching operationthereof in high voltage tests circuits, along with characterization ofRDSON for the tested DUTs 103 using a slope comparison technique basedon the amplified sense voltage signals Vd associated with the individualtested devices 103.

FIG. 3 shows a motherboard 300 that can be rack-mounted along with anumber of other identical motherboards 300 in a test set up to form asystem for RDSON measurement of gallium nitride, aluminum galliumnitride and/or silicon carbide or silicon high-voltage transistors(e.g., FETs, HEMTs, BJTs, etc.) during switching operation andcorresponding high-voltage circuits. In the example of FIG. 3, themotherboard 300 includes an integer number “M” modules or “pods”, eachpod constituting an integer number “N” measurement circuits e.g., 100,each with its output. In one example, there are two measurement circuitsper pod used to determine RDSON, one for the drain voltage measurement,and one for the current measurement as described, and each measurementcircuit uses a differential amplifier. The illustrated embodiment hasone DUT 103 per pod, with the attenuated and clamped drain voltagesignal output and the device current signal output. Accordingly, theillustrated pods individually include one DUT 103, one attenuatorcircuit 102 and one differential amplifier circuit 120 to provide acorresponding amplified sense voltage signal VO on a corresponding line126 as shown. In the general case, each motherboard 300 has an Nmultiplexers 302 and each multiplexer 302 has M inputs. As a result,each motherboard will have M pods and N outputs, with each multiplexermultiplexing the same type of measurement signal from each pod. Forexample, the attenuated and clamped drain signals, VO from all M pods inone example are connected to one multiplexer, and the corresponding DUTsense current signals IS (from the corresponding current sense circuits130 is shown in FIGS. 2 and 3) as output signals, are connected toanother multiplexer. In the example of FIG. 3, M=4 and N=4. Themultiplexers on the mother board in one example allow the coaxialoutputs to be connected to the pod being sampled. Four 4:1 multiplexersare used in this example to sample not only the attenuated and clampeddrain and current signals used to measure RDSON, but also to allowsampling of the drain voltage attenuated by 1000 and the gate voltageattenuated by 20, resulting in four signals per pod. In other examples,an integer number N M:1 multiplexers can be used, where M is the numberof pods and N is the number of signals and coaxial outputs per pod. Inone example, the motherboard accommodates 4 pods, each with foursignals, so there are four 4:1 multiplexers per mother board. In theexample of FIG. 3, the motherboard 300 includes a number of multiplexercircuits 302, in this example 4:1 multiplexers (MUXs), that each receive4 input signals and provide a multiplexer output 304 to a coaxial cable(COAX, not shown).

As further shown in FIG. 4, the motherboards 300 each provide themultiplexed sense voltage signals 304 using matched-length coaxialcables to a first set of N X:1 multiplexers, where X is the number ofmotherboards connected to each multiplexer shown as quad 4:1multiplexers 401. In this example, four quad 4:1 multiplexers 401 eachreceive four multiplexed inputs 304 from a corresponding set of fourmotherboards 300, and the quad multiplexers 401 each provide four-waymultiplexed outputs 402 through corresponding matched-length coaxialcables to a second level N Y:1, e.g. quad 4:1 multiplexer 403, where Yis the number of first level multiplexers connected to a second levelmultiplexer. The multiplexer 403, in turn, provides a multiplexedN-channel (e.g. 4-channel) output 404 to a digitizing instrument e.g.,four-channel oscilloscope 406 via a coaxial cable. The digitizinginstrument 406 is configured to capture a slope of the amplified sensevoltage signal VO as described further below in connection with FIGS. 6and 7 in order for a processing unit to compute and provide an on-stateimpedance value (e.g., RDSON) for the individually measured DUTs 103.Although illustrated and described below including an oscilloscope 406,any suitable analysis system 406 can be used, which includes at leastone analog-to-digital converter circuit and at least one processor todigitize and process received analog signals.

FIG. 5 shows a high voltage transistor DUT 103 (M0) undergoingmeasurement of drain voltage and source current during switching in ahigh voltage test circuit 504 in the system 400 of FIG. 4. In thisexample, the high-voltage test circuit 504 is a hard switchingsubjecting circuit including a high voltage DC supply or power source504 (e.g., 400-600 V in one example) with a capacitance C4 and a loadinductance L connected in series with a resistor R12 (e.g., 0.1 to 5ohms) between the positive (+) output of the source 502 and the drainline 106 (Vd) of the DUT 103. The high-voltage circuit 504 furtherincludes a second diode D2 with an anode connected to the line 106 and acathode connected to the positive (+) output of the source 502. Othersubjecting circuits may also be used, for example, a soft-switchingsubjecting circuit. In this example, the corresponding gate drivercircuit 104 of the pod drives the DUT gate terminal in order toselectively turn M0 on and off to alternately conduct and block currentfrom the high voltage supply 502. In the illustrated configuration, alow switching control signal turns on the DUT 103 (M0), allowing buildupor increase in an inductor current I_(L) flowing in the inductor L. Theattenuator circuit 102 and the differential amplifier circuit 120measure the drain voltage of the DUT 103 to provide the sense voltagesignal VO when the transistor M0 is on. Similarly, the current sensecircuit 130 provides the current sense signal IS to represent the DUTcurrent IDUT flowing from the source of M0 through the current senseresistor R11 when the transistor M0 is turned on. The oscilloscope 406(or other digitizing instrument) receives the Vd and IS signals (e.g.,through one or more multiplexers as described above) and processes thesesignals to provide an output signal or value 500 representing the RDSONof the tested DUT transistor M0. The Vd and IS signals in one exampleare processed for a given DUT 103 using a computer connected to theoscilloscope or another digitizing instrument to analyze the digitalsamples of the received analog signals, and perform curve fitting asneeded, along with slope determination in order to compute or estimateRDSON for the DUT 103.

Referring also to FIGS. 6 and 7, FIG. 6 provides a graph 600illustrating a gate voltage curve or signal voltage waveform VS used todrive the DUT gate, a drain voltage curve Vd and a source current curveIS used by the oscilloscope 406 to analyze drain source on resistanceRDSON using voltage and current slope analysis in the system of FIG. 4.Although described herein as having an oscilloscope 406 to performvarious signal analysis functions, any suitable computer orprocessor-based analytical system can be used. In the illustratedexample, a first slope S1 is determined by the computer or other dataprocessing device which corresponds to the slope of the Vd signal, and asecond slope S2 is determined which corresponds to the slope of the ISsignal during the time when the VS signal is high indicating that thehigh-voltage transistor DUT M0 is on. In this regard, the drain-sourcevoltage represented by the Vd signal and the source current representedby the IS signal ramp as the inductor L in the high-voltage circuit 500charges in response to M0 turning on. The data processing device 406determines the first and second slopes S1 and S2 and computes RDSON as(S1/S2)−R11 (FIGS. 1 and 2). In other implementations where adifferential measurement is obtained across the drain and source of theDUT M0 103, subtraction of the value of the sense resistor R11 is notneeded. The use of the slopes or ramps S1 and S2 in the computation ofRDSON provides immunity against DC offset errors in the attenuation andamplifier circuits 102 and 120.

FIG. 7 provides a graph 700 showing samples obtained from ananalog-to-digital (A/D) converter of the oscilloscope 406 in the system400 of FIGS. 4 and 5, including a series of samples 702 related to theVd signal and a series of samples 704 associated with the IS signal. Inorder to more accurately assess the actual slopes of the correspondingDUT drain-source voltage and source current, the data processing device406 in one example is configured, rather than sampling a singlemeasurement, to instead sample the signal over a configurable period oftime and perform linear curve fitting to apply a linear curve inpost-processing to determine a curve fit Vd from the samples 702, and todetermine the corresponding first slope S1 from the fitted curve Vd.Likewise, curve fitting is also applied to the current sample 704 todetermine a curve IS and determines the second slope S2 from the fittedcurve IS in FIG. 7. The act of curve-fitting enables both noisereduction due to the averaging of multiple samples, and also an increasein the effective number of bits of the A/D converter of the dataprocessing device 406, due to the fitting over multiple digitalquantization units of the converter.

FIG. 8 provides a graph 800 of signal waveforms in the system of FIG. 5,including an inductor current waveform 802 representing the currentI_(L) flowing in the inductor L of the test circuit 504, as well as acurve 804 representing the drain voltage 106, Vd of transistor M0 (103).A curve 806 in FIG. 8 represents the switching control signal (VS)provided to the drive circuit 104 that drives the gate control terminalof the DUT 103 (M0). In one example, the drive circuit 104 provides theswitching control signal to the gate of M0 as a first sequence of shortpulses indicated at 821 in FIG. 8 to stress the high voltage transistorM0, for example, to implement life testing or other test operation tosimulate normal switching operation of the DUT 103 in a switched powerconverter test circuit 504 without wasting energy and minimizing ripplein the inductor current. The first sequence of pulses 804 may beperformed for any suitable duration, with a sufficient number ofswitching pulses to ensure that the DUT 103 as operating at typicalend-use current, temperature and voltage conditions. In one non-limitingexample, the first set of pulses during the first sequence 821 have ashort on-time duration 808, such as about 250 ns, and the first sequenceof short pulses are provided at a switching period of approximately 45μs corresponding to a switching frequency of approximately 22 kHz. Thefirst sequence 821 is followed by a second sequence 822 in which thedrive circuit 104 provides the switching control signal in a low stateto turn the high voltage transistor M0 off. In one example, the secondsequence 822 is a few milliseconds long, allowing the inductor currentI_(L) (e.g., curve 802 in FIG. 8) to decrease to a predetermined value,such as zero in the illustrated example. Allowing full or at leastpartial discharge of the inductor L facilitates use of a longer on-timepulse duration 814 to turn the high voltage transistor M0 on in asubsequent third sequence 823 to obtain the current sense signal IS andthe amplified sense voltage signal VO, and to allow the analysis system406 to compute the on-state impedance value RDSON of the high voltagetransistor M0. Discharging the inductor to a predetermined value alsoallows the RDSON measurement to be repeatable for different stresscurrents. In particular, the on-time duration in the third sequence 823in one example is greater than a duration 816 of approximately 1 μs ormore during which the attenuator circuit 102 and the differentialamplifier circuit 124 described above measure and provide the amplifiedsense voltage signal Vd, including any suitable settling time of thecircuits 102, 124.

In one example, the drive circuit 104 is configured to provide theswitching control signal to the DUT 103 such that the first sequence 821of short pulses individually have a first on-time 808 that is less thanthe on-time 814 of the third sequence 823. In this manner, the firstsequence of short pulses 821 facilitates simulated operation of the DUT103 in a switching power converter with the inductor current 802representing real-life switching converter conditions, while alsominimizing both inductor current ripple and energy usage, while thesecond sequence 822 facilitates full or partial discharge of theinductor L for a duration 812 of a few milliseconds to reduce theinductor current level I_(L), and the subsequent third sequence 823thereafter provides the test pulse to turn on M0 for the on-timeduration 814 to allow sufficient measurement time to measure the drainvoltage of the DUT 103 while the inductor current is sufficiently low tomitigate the possibility to overstress the DUT 103 during on-stateimpedance measurement and for the RDSON measurement to be taken in theFET linear region (saturation region for BJT). In addition, for theduration 812 of the second sequence 822, the transistor is held underhigh voltage so that interface or bulk traps of the DUT 103 remaincharged, and the RDSON value is measured during the measurement pulseduring the time period 816 in FIG. 8 so that the determined RDSONreflects the presence of charged traps in the DUT 103. Thereafter, asseen in FIG. 8, the drive circuit 104 resumes switching operation in thefirst sequence 821 as previously described. In one example, the thirdsequence 823 allows a sufficient time 820 in order for the inductorcurrent I_(L) to again ramp down to zero or some other determine value,before the next sequence 821 of short pulses begins. As seen in FIG. 8,the inductor current curve 802 again begins to ramp up with successivecharging and discharging cycles through the resumed switching operationof the DUT 103, and the next instance of the second and third sequences822 and 823 in one example is repeated after the inductor current curve802 has again resumed a normal operating level and sufficient stresstime has elapsed to warrant a measurement. The illustrated test sequencecan be implemented by individual gate drive circuits 104 of a pluralityof the pods and motherboards 300, with a centralized controller (notshown) coordinating the switching test operation of the individual DUTs103 and measurement of the corresponding drain voltages and transistorcurrents via the multiplexers 302, 401, 403 and matched-length cablessuch that a single analysis system (e.g., scope 406) can performslope-based RDSON computations on converted analog signals from theindividual motherboards 300.

The above examples are merely illustrative of several possibleembodiments of various aspects of the present disclosure, whereinequivalent alterations and/or modifications will occur to others skilledin the art upon reading and understanding this specification and theannexed drawings. Modifications are possible in the describedembodiments, and other embodiments are possible, within the scope of theclaims.

The following is claimed:
 1. A measurement circuit to measure a voltageof a drain terminal of a high voltage transistor during switching, themeasurement circuit comprising: an attenuator circuit to generate anattenuator output signal representing a voltage across the high voltagetransistor when the high voltage transistor is turned on, the attenuatorcircuit comprising: a clamp transistor having a first terminal coupledwith the drain terminal of the high voltage transistor through a firstresistor, a second terminal to provide a sense signal to a firstinternal node, and a control terminal, a bias circuit to provide a firstbias signal to the control terminal based on a first supply voltage toturn the clamp transistor on when the high voltage transistor is turnedon, a first voltage divider circuit, including an attenuator output nodeto provide the attenuator output signal based on the sense signal fromthe clamp transistor, a first divider resistor coupled between the firstinternal node and the attenuator output node, and a second dividerresistor coupled between the attenuator output node and a constantvoltage node, and a Zener diode coupled between the first internal nodeand the constant voltage node to limit a voltage between the firstinternal node and the constant voltage node when the high voltagetransistor is turned off; and a differential amplifier, including afirst input coupled with the attenuator output node to receive theattenuator output signal, a second input coupled with a referencevoltage node, and an output to provide an amplified sense voltage signalrepresenting the voltage across the high voltage transistor when thehigh voltage transistor is turned on.
 2. The measurement circuit ofclaim 1, further comprising a clamp circuit to condition the attenuatoroutput signal, the clamp circuit comprising: a second voltage dividercircuit, including a third divider resistor coupled between a secondsupply voltage and a second internal node, and a fourth divider resistorcoupled between the second internal node and the constant voltage node;and a diode to limit a voltage of the attenuator output node, the diodeincluding an anode coupled with the attenuator output node, and acathode coupled with the second internal node.
 3. The measurementcircuit of claim 2, further comprising a compensation capacitor tocompensate a capacitance of the first input of the differentialamplifier, the compensation capacitor including a first terminalconnected to the first internal node, and a second terminal connected tothe attenuator output node.
 4. The measurement circuit of claim 3,wherein the first divider resistor is adjustable.
 5. The measurementcircuit of claim 4, wherein the bias circuit includes a second resistorcoupled between the first supply voltage and the control terminal of theclamp transistor, a third resistor coupled between the control terminalof the clamp transistor and the constant voltage node, and a biascircuit capacitor coupled between the control terminal of the clamptransistor and the constant voltage node to reduce voltage spikes on thecontrol terminal of the clamp transistor during switching of the highvoltage transistor.
 6. The measurement circuit of claim 3, wherein thebias circuit includes a second resistor coupled between the first supplyvoltage and the control terminal of the clamp transistor, a thirdresistor coupled between the control terminal of the clamp transistorand the constant voltage node, and a bias circuit capacitor coupledbetween the control terminal of the clamp transistor and the constantvoltage node to reduce voltage spikes on the control terminal of theclamp transistor during switching of the high voltage transistor.
 7. Themeasurement circuit of claim 2, wherein the first divider resistor isadjustable.
 8. The measurement circuit of claim 2, wherein the biascircuit includes a second resistor coupled between the first supplyvoltage and the control terminal of the clamp transistor, a thirdresistor coupled between the control terminal of the clamp transistorand the constant voltage node, and a bias circuit capacitor coupledbetween the control terminal of the clamp transistor and the constantvoltage node to reduce voltage spikes on the control terminal of theclamp transistor during switching of the high voltage transistor.
 9. Themeasurement circuit of claim 1, further comprising a compensationcapacitor to compensate a capacitance of the first input of thedifferential amplifier, the compensation capacitor including a firstterminal connected to the first internal node, and a second terminalconnected to the attenuator output node.
 10. The measurement circuit ofclaim 9, wherein the first divider resistor is adjustable.
 11. Themeasurement circuit of claim 9, wherein the bias circuit includes asecond resistor coupled between the first supply voltage and the controlterminal of the clamp transistor, a third resistor coupled between thecontrol terminal of the clamp transistor and the constant voltage node,and a bias circuit capacitor coupled between the control terminal of theclamp transistor and the constant voltage node to reduce voltage spikeson the control terminal of the clamp transistor during switching of thehigh voltage transistor.
 12. The measurement circuit of claim 1, whereinthe first divider resistor is adjustable.
 13. The measurement circuit ofclaim 12, wherein the bias circuit includes a second resistor coupledbetween the first supply voltage and the control terminal of the clamptransistor, a third resistor coupled between the control terminal of theclamp transistor and the constant voltage node, and a bias circuitcapacitor coupled between the control terminal of the clamp transistorand the constant voltage node to reduce voltage spikes on the controlterminal of the clamp transistor during switching of the high voltagetransistor.
 14. The measurement circuit of claim 1, wherein the biascircuit includes a second resistor coupled between the first supplyvoltage and the control terminal of the clamp transistor, a thirdresistor coupled between the control terminal of the clamp transistorand the constant voltage node, and a bias circuit capacitor coupledbetween the control terminal of the clamp transistor and the constantvoltage node to reduce voltage spikes on the control terminal of theclamp transistor during switching of the high voltage transistor.
 15. Asystem to determine an on-state impedance of a high voltage transistorduring switching, the system comprising: a test circuit to receive thehigh voltage transistor; a drive circuit to provide a switching controlsignal to a gate control terminal of the high voltage transistor toalternately conduct and block current from a high voltage supply in thetest circuit; a current sense circuit to provide a current sense signalrepresenting a current flowing in the high voltage transistor; anattenuator circuit to generate an attenuator output signal representinga voltage across the high voltage transistor when the high voltagetransistor is turned on, the attenuator circuit comprising: a clamptransistor having a first terminal coupled with a drain terminal of thehigh voltage transistor through a first resistor, a second terminal toprovide a sense signal to a first internal node, and a control terminal,a bias circuit to provide a first bias signal to the control terminalbased on a first supply voltage to turn the clamp transistor on when thehigh voltage transistor is turned on, a first voltage divider circuit,including an attenuator output node to provide the attenuator outputsignal based on the sense signal from the clamp transistor, a firstdivider resistor coupled between the first internal node and theattenuator output node, and a second divider resistor coupled betweenthe attenuator output node and a constant voltage node, and a Zenerdiode coupled between the first internal node and the constant voltagenode to limit a voltage between the first internal node and the constantvoltage node when the high voltage transistor is turned off; adifferential amplifier, including a first input coupled with theattenuator output node to receive the attenuator output signal, a secondinput coupled with a reference voltage node, and an output to provide anamplified sense voltage signal representing the voltage across the highvoltage transistor when the high voltage transistor is turned on; and ananalysis system, including at least one processor to compute an on-stateimpedance value based on a slope of the current sense signal and a slopeof the amplified sense voltage signal.
 16. The system of claim 15,further comprising a clamp circuit to condition the attenuator outputsignal, the clamp circuit comprising: a second voltage divider circuit,including a third divider resistor coupled between a second supplyvoltage and a second internal node, and a fourth divider resistorcoupled between the second internal node and the constant voltage node;and a diode to limit a voltage of the attenuator output node, the diodeincluding an anode coupled with the attenuator output node, and acathode coupled with the second internal node.
 17. The system of claim15, further comprising a compensation capacitor to compensate acapacitance of the first input of the differential amplifier, thecompensation capacitor including a first terminal connected to the firstinternal node, and a second terminal connected to the attenuator outputnode.
 18. The system of claim 15, wherein the first divider resistor isadjustable.
 19. The system of claim 15, wherein the bias circuitincludes a second resistor coupled between the first supply voltage andthe control terminal of the clamp transistor, a third resistor coupledbetween the control terminal of the clamp transistor and the constantvoltage node, and a bias circuit capacitor coupled between the controlterminal of the clamp transistor and the constant voltage node to reducevoltage spikes on the control terminal of the clamp transistor duringswitching of the high voltage transistor.
 20. The system of claim 15,wherein the drive circuit is operative to provide the switching controlsignal to the gate control terminal of the high voltage transistor as afirst sequence of short pulses to stress the high voltage transistor,followed by a second sequence to turn the high voltage transistor off toallow an inductor current of the test circuit to decrease to apredetermined value, and a third sequence following the second sequenceto turn the high voltage transistor on to obtain the current sensesignal and the amplified sense voltage signal to allow the analysissystem to compute the on-state impedance value of the high voltagetransistor.
 21. The system of claim 20, wherein the drive circuit isoperative to provide the switching control signal to provide the firstsequence of short pulses individually having a first on-time, andwherein the drive circuit is operative to provide the switching controlsignal in the third sequence to turn the high voltage transistor on fora second on-time greater than the first on-time.
 22. The system of claim15, comprising: wherein the test circuit comprises a plurality of testcircuits individually operative to receive a corresponding one of aplurality of high voltage transistors; wherein the drive circuitcomprises a plurality of drive circuits individually operative toprovide a switching control signal to a gate control terminal of acorresponding one of the plurality of high voltage transistors; whereinthe current sense circuit comprises a plurality of current sensecircuits individually operative to provide a current sense signalrepresenting a current flowing in a corresponding one of the pluralityof high voltage transistors; wherein the attenuator circuit comprises aplurality of attenuator circuits individually operative to generate anattenuator output signal representing a voltage across a correspondingone of the plurality of high voltage transistors when the correspondingone of the plurality of high voltage transistors is turned on, each ofthe individual attenuator circuits comprising: a clamp transistor havinga first terminal coupled with a drain terminal of the corresponding oneof the plurality of high voltage transistors through a first resistor, asecond terminal to provide a sense signal to a first internal node, anda control terminal, a bias circuit to provide a first bias signal to thecontrol terminal based on a first supply voltage to turn the clamptransistor on when the corresponding one of the plurality of highvoltage transistors is turned on, a first voltage divider circuit,including an attenuator output node to provide the attenuator outputsignal based on the sense signal from the clamp transistor, a firstdivider resistor coupled between the first internal node and theattenuator output node, and a second divider resistor coupled betweenthe attenuator output node and a constant voltage node, and a Zenerdiode coupled between the first internal node and the constant voltagenode to limit a voltage between the first internal node and the constantvoltage node when the high voltage transistor is turned off; and whereinthe differential amplifier comprises a plurality differential amplifiersindividually associated with a corresponding one of the attenuatorcircuits, the individual differential amplifiers including a first inputcoupled with the corresponding attenuator output node to receive thecorresponding attenuator output signal, a second input coupled with areference voltage node, and an output to provide an amplified sensevoltage signal representing the voltage across the corresponding one ofthe plurality of high voltage transistors when a corresponding one ofthe plurality of high voltage transistors is turned on; and at least onemultiplexer circuit to receive signals from the differential amplifiersand from the current sense circuits, and to provide current sensesignals and amplified sense voltage signals to the analysis systemcorresponding to the individual high voltage transistors; wherein theanalysis system is operative to receive the current sense signals andamplified sense voltage signals from the at least one multiplexercircuit, and to compute an on-state impedance value for the individualhigh voltage transistors based on a slope of a corresponding currentsense signal and a slope of a corresponding amplified sense voltagesignal.
 23. A measurement circuit to measure a voltage of a drainterminal of a high voltage transistor during switching, the measurementcircuit comprising: an attenuator circuit to generate an attenuatoroutput signal representing a voltage across the high voltage transistorwhen the high voltage transistor is turned on, the attenuator circuitcomprising: a clamp transistor having a first terminal coupled with thedrain terminal of the high voltage transistor through a first resistor,a second terminal to provide a sense signal to a first internal node,and a control terminal, a bias circuit to provide a first bias signal tothe control terminal based on a first supply voltage to turn the clamptransistor on when the high voltage transistor is turned on, a firstvoltage divider circuit, including an attenuator output node to providethe attenuator output signal based on the sense signal from the clamptransistor, a first divider resistor coupled between the first internalnode and the attenuator output node, and a second divider resistorcoupled between the attenuator output node and a constant voltage node,and a first clamp circuit to limit a voltage between the first internalnode and the constant voltage node when the high voltage transistor isturned off; a differential amplifier, including a first input coupledwith the attenuator output node to receive the attenuator output signal,a second input coupled with a reference voltage node, and an output toprovide an amplified sense voltage signal representing the voltageacross the high voltage transistor when the high voltage transistor isturned on; and a second clamp circuit, including: a second voltagedivider circuit, including a third divider resistor coupled between asecond supply voltage and a second internal node, and a fourth dividerresistor coupled between the second internal node and the constantvoltage node, and a diode to limit a voltage of the attenuator outputnode, the diode including an anode coupled with the attenuator outputnode, and a cathode coupled with the second internal node.
 24. A methodof determining an on-state impedance of a high voltage transistor,comprising: using a first clamping circuit, which limits voltage appliedto an attenuation circuit, and measuring a drain voltage of the highvoltage transistor while the high voltage transistor is turned on;clamping a voltage coupled to the attenuation circuit and to an input ofan amplifier and limiting voltage applied to the input of the amplifier;measuring a transistor current flowing through the high voltagetransistor while the high voltage transistor is turned on, wherein themeasuring of the drain voltage and the transistor current are performedwithout direct connection of an oscilloscope to a device under test;digitizing a plurality of samples of the measured drain voltage of thehigh voltage transistor; digitizing a plurality of samples of themeasured transistor current; using at least one processor, determining afirst slope corresponding to the plurality of samples of the measureddrain voltage; using the at least one processor, determining a secondslope corresponding to the plurality of samples of the measuredtransistor current; and using the at least one processor, computing anon-state impedance value at least partially according to the first andsecond slopes.
 25. The method of claim 24, comprising: using the atleast one processor, determining the first slope by curve fitting theplurality of samples of the measured drain voltage; and using the atleast one processor, determining the second slope by curve fitting theplurality of samples of the measured transistor current.